ASTM F996 - 11
ASTM F996 - 11
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ASTM F996 - 11

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

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ASTM F996 - 11

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

Purchase Options: Immediate PDF Download

Printed publication for Next Day or Standard Delivery
Price:  £36 (50% discount for members - click here for more information)

ASTM F996 - 11

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

Purchase Options: Immediate PDF Download

Printed publication for Next Day or Standard Delivery
Price:  £36 (50% discount for members - click here for more information)
Product details for ASTM F996 - 11
Category: ELECTRONICS

Publication date: 2011-01-01

Product detail: 7 pages

ISBN reference: 978 0 580 74564 5

Cross references to standards relating to ASTM F996 - 11:

Keywords: C/v characteristics, Current-voltage characteristics, Interface states, Ionizing radiation, MOSFET, Oxide-trapped holes, Threshold voltage shift, Trapped holes, Current measurement-semiconductors, Electrical conductors (semiconductors), Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure-electronic components/devices, Silicon semiconductors, Threshold voltage

Variations and abbreviations: ASTMF996-11,ASTMF996,ASTM F996
Standards in the ASTM F996 series:  ASTM F996 - 10   ASTM F996 - 11   ASTM F996 - 11(2018)  


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